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| HF30-28F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF30-28F is a 28 V epitaxial RF NPN planar transistor designed primarily for SSB communications. The device utilizes emitter ballasting for improved ruggedness and reliability. PACKAGE STYLE .380 4L FLG B .112 x 45 A E C O.125 NOM. FULL R J .125 FEATURES: * PG = 18 dB min. at 30 W/30 MHz * IMD3 = -30 dBc max. at 30 W(PEP) * OmnigoldTM Metalization System * POUT 30 W @ 30 MHz B C D F E E I GH MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG JC 4.5 A 65 V 36 V 4.0 V 80 W @ TC = 25 C -65 C to +200 C -65 C to +150 C 2.2 C/W DIM A B C D E F G H I J MINIMUM inches / mm MAXIMUM inches / mm .220 / 5.59 .785 / 19.94 .720 / 18.29 .970 / 24.64 .230 / 5.84 .730 / 18.54 .980 / 24.89 .385 / 9.78 .004 / 0.10 .085 / 2.16 .160 / 4.06 .006 / 0.15 .105 / 2.67 .180 / 4.57 .280 / 7.11 .240 / 6.10 .255 / 6.48 ORDER CODE: ASI10604 CHARACTERISTICS SYMBOL BVCBO BVCES BVCEO BVEBO ICBO hFE COB TC = 25 C NONETEST CONDITIONS IC = 200 mA IC = 200 mA IC = 200 mA IE = 10 mA VCB = 30 V VCE = 5.0 V VCB = 30 V IC = 500 mA f = 1.0 MHz MINIMUM TYPICAL MAXIMUM 65 65 35 4.0 1.0 10 200 65 UNITS V V V V mA --pF A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. D 1/2 HF30-28F ERROR! REFERENCE SOURCE NOT FOUND. GP C IMD3 VCE = 28 V ICQ = 25 Ma PIN = 0.48 W POUT = 30 W f = 30 MHz 18 60 -28 dB % dBc A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. D 2/2 |
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